发明名称 |
Pattern loading effect reduction for selective epitaxial growth |
摘要 |
A method of reducing the pattern-loading effect for selective epitaxial growth. The method includes the steps of: forming a mask layer over a substrate; forming an isolation region in the substrate isolating an active region and a dummy active region; removing at least a portion of the mask layer in the active region and thus forming a first opening, the substrate being exposed through the first opening; removing at least a portion of the mask layer in the dummy active region and thus forming a second opening, the substrate being exposed through the second opening; and performing selective epitaxial growth simultaneously on the substrate in the first opening and second openings. By introducing the second opening wherein epitaxial growth occurs, the pattern density is more uniform and thus the pattern-loading effect is reduced.
|
申请公布号 |
US2006228850(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050100053 |
申请日期 |
2005.04.06 |
申请人 |
TSAI PANG-YEN;CHANG CHIH-CHIEN;YANG INDIRA;LEE TZE-LIANG;CHEN SHIH-CHANG |
发明人 |
TSAI PANG-YEN;CHANG CHIH-CHIEN;YANG INDIRA;LEE TZE-LIANG;CHEN SHIH-CHANG |
分类号 |
H01L21/8238;H01L21/76 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|