| 摘要 |
A method (400) for improving adhesion of Cu to a Ru layer (650a, 650b) in Cu metallization. The method (400) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1 , 100), depositing a Ru layer (650a, 650b) on the substrate (25, 125) in a chemical vapor deposition process, and forming a Cu seed layer (660a, 660b) on the Ru layer (650a, 650b) to prevent oxidation of the Ru layer (650a, 650b). The Cu seed layer (660a, 660b) is partially or completely oxidized prior to performing a Cu bulk plating process on the substrate (25, 125). The oxidized portion (660a, 667) of the Cu seed layer (660a, 660b) is substantially dissolved and removed from the substrate (25, 125) during interaction with a Cu plating solution, thereby forming a bulk Cu layer (670a, 670b) with good adhesion to the underlying Ru layer (650a, 650b). |
