| 摘要 |
PROBLEM TO BE SOLVED: To provide a small size thin film transistor ensuring a higher on/off-ratio. SOLUTION: The thin film transistor comprises a first transistor element 30A including a first channel region 1aA, first source regions (1bA, 1dA), and first drain regions (1cA, 1eA) forming the rear surface of a semiconductor layer 42, a first gate insulating film 2A formed on the rear surface of the semiconductor layer 42, and a first gate electrode 35A provided on the rear surface of the first gate insulating film 2A; and a second transistor element 30B including a second channel region 1aB, second source regions (1bB, 1dB) and second drain regions (1cB, 1eB) forming the front surface of the semiconductor 42, a second gate insulating film 2B formed on the front surface of the semiconductor layer 42, and a second gate electrode 35B provided on the front surface of the second gate insulating film 2B. COPYRIGHT: (C)2007,JPO&INPIT |
