发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus, capable of realily improving the in-plane uniformity of illuminance distribution on a substrate, moreover with high reproducibility. SOLUTION: A semiconductor wafer W to be a processing object is held on a holder 7. A light irradiator 5 is provided with a plurality of flash lamps 69 and a reflector 52. On a light-transmitting plate 61, provided in between the light irradiator 5 and the holder 7, an illuminance adjusting plate 10 having a diameter smaller than the diameter of the semiconductor wafer W held by the holder 7 is mounted, such that its center is positioned right above the center of the semiconductor wafer W in a vertical direction. While the quantity of light reaching the inner side of the semiconductor wafer W is lowered due to reflection at the surface and the bottom surface of the illuminance adjusting plate 10, since the light reaching the peripheral edge of the semiconductor wafer W will not be transmitted through the illuminance adjusting plate 10, its light quantity is not lowered. As a result, the in-plane uniformity of the illuminance distribution is improved on the semiconductor wafer W. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278802(A) 申请公布日期 2006.10.12
申请号 JP20050096677 申请日期 2005.03.30
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 NISHIHARA HIDEO
分类号 H01L21/26;H01L21/265;H01L21/31 主分类号 H01L21/26
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