| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method for forming a base oxide film which is desirable to be used for a high-speed device on a silicon substrate. SOLUTION: The substrate processing method has a first cleaning process for cleaning a silicon substrate with a first cleaning liquid comprising ammonia and oxygenated water and after the cleaning, cleaning it with a cleaning liquid comprising HF; a second cleaning process for cleaning the silicon substrate with a second cleaning liquid comprising hydrochloric acid and oxygenated water and after the cleaning, cleaning it with a cleaning liquid comprising HF; and an oxide film formation process for forming a silicon oxide film on the silicon substrate after the second cleaning process. The second cleaning process is repeated a plurality of times. COPYRIGHT: (C)2007,JPO&INPIT
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