发明名称 |
Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation |
摘要 |
A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electromagnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.
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申请公布号 |
US2006226518(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050091755 |
申请日期 |
2005.03.29 |
申请人 |
MASANOBU IGETA;WAJDA CORY;LEUSINK GERT |
发明人 |
MASANOBU IGETA;WAJDA CORY;LEUSINK GERT |
分类号 |
H01L23/58;C23C16/50;H01L21/4757 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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