发明名称 |
SIMPLIFIED VERTICAL ARRAY DEVICE DRAM/eDRAM INTEGRATION: METHOD AND STRUCTURE |
摘要 |
The present invention provides a semiconductor structure that includes an active wordline located above a semiconductor memory device and a passive wordline located adjacent to said active wordline and above an active area of a substrate. In accordance with the present invention, the passive wordline is separated from the active area by a pad nitride. The present invention also provides methods that are capable of forming the inventive semiconductor structure.
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申请公布号 |
US2006226481(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050907630 |
申请日期 |
2005.04.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM DEOK-KEE;DIVAKARUNI RAMACHANDRA;RADENS CARL J.;PARK DAE-GYU |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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