发明名称 Plasma enhanced atomic layer deposition system and method
摘要 A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
申请公布号 US2006225655(A1) 申请公布日期 2006.10.12
申请号 US20050094461 申请日期 2005.03.31
申请人 TOKYO ELECTRON LIMITED 发明人 FAGUET JACQUES;CERIO FRANK M.JR.;MATSUDA TSUKASA;YAMAMOTO KAORU
分类号 H05H1/24;C23C16/00 主分类号 H05H1/24
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