发明名称 SEMICONDUCTOR DEVICE AND REFERENCE VOLTAGE GENERATING METHOD
摘要 <p>A semiconductor device is provided with a first internal reference cell (4), a second internal reference cell (5), an external reference cell (6), and at least two current mirror circuits. The semiconductor device has cascode circuits (15, 16, 8), which output a reference voltage from a current flowing in the reference cell by corresponding to the current to at least two output paths, and switches (SWAR1, SWAR2, SWBR1, SWBR2, SWXR1, SWXR2), which are provided at least on each of the two output paths and select the output path for outputting the reference voltage. Therefore, the number of outputs of the reference voltage can be increased and reduced without increasing the number of reference cells. Thus, a judgment voltage obtained from such reference voltages can be easily adjusted, and reading can be performed without reducing a margin at the time of reading data from a core cell (3).</p>
申请公布号 WO2006106571(A1) 申请公布日期 2006.10.12
申请号 WO2005JP06266 申请日期 2005.03.31
申请人 SPANSION LLC;SPANSION JAPAN LIMITED;TSUKIDATE, YOSHIHIRO 发明人 TSUKIDATE, YOSHIHIRO
分类号 G05F3/26 主分类号 G05F3/26
代理机构 代理人
主权项
地址