| 摘要 |
A circuit device (1) includes a ceramic substrate (11), an A1 wiring layer (12) provided on the ceramic substrate (11), and a semiconductor device (20) and a bus bar (30) which are electrically connected to the wiring layer (12). On part of the wiring layer (12), a Ni layer (13) is plated. Thus a coated region in which the wiring layer (12) is coated with nickel having solder wetability superior to aluminium and an exposing region in which the wiring layer (12) is exposed as viewed from above the ceramic substrate (11) are provided. The semiconductor device (20) is connected onto the Ni layer (13) within the coated region through solder (21). The bus bar (30) is ultrasonically bonded to the wiring layer (12) within the exposing region as viewed from above the ceramic substrate (11). Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided. |
