METHOD FOR INITIALIZING RESISTANCE-VARIABLE MATERIAL, MEMORY DEVICE CONTAINING A RESISTANCE-VARIABLE MATERIAL, AND METHOD FOR INITIALIZING NONVOLATILE MEMORY CIRCUIT INCLUDING VARIABLE RESISTOR

摘要

An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.