| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element capable of improving an operation speed of a peripheral circuit region transistor and reducing a short channel effect, by forming a transistor in a cell region, a transistor used for generation of V<SB>PP</SB>or a path thereof, and a V<SB>DD</SB>transistor so that the thicknesses of their gate oxide films differ from each other. <P>SOLUTION: In a semiconductor element having a fin gate structure, the transistor in a cell region, the transistor used for generation of V<SB>PP</SB>or a path thereof and the transistor to which V<SB>DD</SB>is applied are formed so that the thicknesses of their gate oxide films differ from each other. In this way, a threshold voltage of the cell transistor is increased to a desired value, the operation speed of the peripheral circuit region transistor is improved, and the short channel effect is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
