| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of implantation into a substrate using ion beam, by which different portions in a substrate receive different doses according to different recipes during an implantation process in ion implantation. SOLUTION: The implantation method has a step of scanning a substrate with an ion beam along a series of scan lines extending in a first direction, a step of providing relative rotation between the substrate and the ion beam, and a step of scanning the substrate with the ion beam along a series of second scan lines in a different direction. An implantation recipe is changed during scanning in each direction such that a different region is produced during each scan step. The regions formed in this way during the two scan steps are overlapped with each other such that two different portions of the substrate receive different doses according to different recipes during an implantation process. The different recipes may cause different dopant concentration, doping depth, or dopant species. COPYRIGHT: (C)2007,JPO&INPIT
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