| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of obtaining large throughput and increasing uniformity of the temperature of a treated substrate, and a method of manufacturing a semiconductor device. SOLUTION: An ALD apparatus for alternately supplying a plurality of treatment gas on the front surface of wafer 1 and forming a film on the wafer 1 using an ALD method, has a boat 2 for holding the plurality of wafer 1, a treatment chamber 12 for housing the wafer 1 and the boat 2, a heater 14 for heating the wafer 1, a gas supply pipe 21 for alternately supplying the plurality of treatment gas in the treatment chamber 12, a discharge pipe 16 for discharging atmosphere in the treatment chamber 12, and a rotation axis 19 for rotating the boat 2 for rotating the wafer during the treatment of the wafer 1. COPYRIGHT: (C)2007,JPO&INPIT
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