| 摘要 |
PROBLEM TO BE SOLVED: To improve manufacturing stability while effectively suppressing the short channel effect of a field-effect transistor. SOLUTION: A halo impurity of the opposite conductivity type from a first impurity of first conductivity type is ion implanted into a silicon substrate 10, and then the first impurity of the first conductivity type is ion implanted into the substrate and flash lamp annealing is performed thereon, so that a p-type halo region 113 and an n-type extension region 111 are formed. Thereafter, a second impurity of the first conductivity type is ion implanted into the silicon substrate 101 and flash lamp annealing is performed thereon, so that an n-type source-drain region 109 is formed. After that, the impurities in the silicon substrate 101 are activated by spike RTA. COPYRIGHT: (C)2007,JPO&INPIT
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