发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof capable of preventing occurrence of a bent by increasing the rigidity of a structure in one way or another. SOLUTION: The semiconductor device 10 includes a wiring substrate 51, an LSI chip 52 provided on the wiring substrate 51, a heat sink 11 provided on the LSI chip 52, a reinforcing plate 12 inserted to a circumferential edge of air gap between the heat sink 11 and the wiring substrate 51, a capacitor 71 provided on the wiring substrate 51 in the air gap between the heat sink 11 and the wiring substrate 51, and a resin 13 filled in the air gap between the heat sink 11 and the wiring substrate 51. The resin 13 is filled in the air gap surrounded by the LSI chip 52, wiring substrate 51, the reinforcing plate 12 and the head sink 11. The resin 13 suppresses the occurrence of a bent caused by the entire heat of the semiconductor 10 produced by the existence of the air gap. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278771(A) 申请公布日期 2006.10.12
申请号 JP20050096227 申请日期 2005.03.29
申请人 NEC CORP 发明人 MIYAZAKI YUICHI
分类号 H01L25/00;H01L23/12;H01L23/28;H01L23/29 主分类号 H01L25/00
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