发明名称 Mode-locked quantum dot laser with controllable gain properties by multiple stacking
摘要 The optical gain and the differential gain of a quantum dot gain region in a gain section of a passive or hybrid mode-locked laser is varied by stacking at least two planes of quantum dots. All quantum dot planes are preferably formed by the same fabrication method and under the same fabrication conditions. The number of stacked planes of quantum dots is selected such that the optical gain and the differential gain are both in their optimal range with respect to the optical loss in the laser resonator and to the differential gain in the saturable absorber element. This results in a device with a short pulse width, stable mode-locking, high-power, and temperature-independent operation.
申请公布号 US2006227825(A1) 申请公布日期 2006.10.12
申请号 US20050100970 申请日期 2005.04.07
申请人 NL-NANOSEMICONDUCTOR GMBH 发明人 KOVSH ALEXEY;ZHUKOV ALEXEY
分类号 H01S3/13 主分类号 H01S3/13
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