| 摘要 |
An electro-optical device having a pixel-switching thin film transistor disposed below the data lines on a substrate and a storage capacitor with a stacked structure of a high-potential electrode, a dielectric layer, and pixel-potential electrode that is disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor and disposed above the data lines. A pixel electrode is disposed above the storage capacitor for each pixel and a peripheral circuit is disposed in a peripheral area located around a pixel array area in which the pixels are arranged. The dielectric layer includes a non-opened area located between opened areas of the pixels. A peripheral dielectric layer area includes a region opposed to a channel region of a peripheral-circuit thin film transistor which is disposed below the storage capacitor and constitutes the peripheral circuit.
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