发明名称 Method for fabricating image sensor using wafer back grinding
摘要 Provided is a method for fabricating an image sensor using a wafer back grinding process. The method includes: forming a microlens protection layer over a substrate structure including a light sensing device and other associated devices; opening a pad open unit of the substrate structure using a mask; removing the mask; forming a photoresist layer over the substrate structure with the microlens protection layer; gluing a tape on the photoresist layer; performing a wafer back grinding process; and removing the tape and the photoresist layer.
申请公布号 US2006228826(A1) 申请公布日期 2006.10.12
申请号 US20060399941 申请日期 2006.04.06
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KIM EUN-JI;KWON KYOUNG-KUK
分类号 H01L21/00;H01L21/339 主分类号 H01L21/00
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