| 发明名称 |
Silicon-doped carbon dielectrics |
| 摘要 |
A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of carbon-to-silicon in the silicon-doped carbon matrix.
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| 申请公布号 |
US2006226516(A1) |
申请公布日期 |
2006.10.12 |
| 申请号 |
US20050105036 |
申请日期 |
2005.04.12 |
| 申请人 |
INTEL CORPORATION |
发明人 |
GOODNER MICHAEL D.;ANTONELLI GEORGE A. |
| 分类号 |
H01L23/58;H01L21/469 |
主分类号 |
H01L23/58 |
| 代理机构 |
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