发明名称 Bias circuit for a wideband amplifier driven with low voltage
摘要 An amplifier includes a ground, first and second MOS transistors, a first resistive load and a supply voltage, which are connected in series in this order. A bias circuit provides first and second bias voltages to the gate electrodes of the first and second transistors, respectively. The bias circuit includes a third MOS transistor having its gate and drain electrode diode-connected. The drain electrode of the third transistor provides the first bias voltage of the amplifier. The bias circuit further includes fourth and fifth MOS transistors, and a second resistive load, which are connected in series in this order. The second resistive load is connected to the supply voltage. The fourth transistor has its gate electrode connected to the drain electrode of the third transistor. The fifth transistor has its gate and drain electrodes diode-connected. The drain electrode of the fifth transistor provides the second bias voltage.
申请公布号 US2006226910(A1) 申请公布日期 2006.10.12
申请号 US20060359370 申请日期 2006.02.23
申请人 OKI ELECTRIC INDUSTRY CO., LTD 发明人 TANOI SATORU
分类号 H03F3/04 主分类号 H03F3/04
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