发明名称 HIGH SPEED LEVEL SHIFTER
摘要 An interface circuit includes a level shifter which shifts a voltage level of a first signal and a second signal from a first voltage level to a second voltage level. A first PMOS transistor is gated to an output of the level shifter and connected between a first node and a supply voltage of the second voltage level. A second PMOS transistor is gated to receive the second signal and connected between the first node and an output terminal. A first NMOS transistor is gated to receive the second signal and connected between the output terminal and a ground voltage.
申请公布号 KR20060106106(A) 申请公布日期 2006.10.12
申请号 KR20050028535 申请日期 2005.04.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, MIN SU
分类号 H03K19/0185;H03K19/0175 主分类号 H03K19/0185
代理机构 代理人
主权项
地址