| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition, having improved change rate of film thickness after irradiation with active rays or radiation, improved sensitivity, resolution, line edge roughness, change the rate of line width in-vacuum PED, change the rate in sensitivity in vacuum PED, and dissolution contrast on EUV exposure, and to provide a pattern forming method that uses the composition. <P>SOLUTION: The chemically amplified resist composition contains (A) a resin, (B) a compound which generates an acid by irradiation with active rays or radiation, and (C) an antioxidant. The pattern forming method is carried out by using the composition. <P>COPYRIGHT: (C)2007,JPO&INPIT |
