ALUMINUM NITRIDE SINTERED COMPACT, MEMBER FOR MANUFACTURING SEMICONDUCTOR, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE SINTERED COMPACT

摘要

PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having high volumetric resistance in high temperature and high voltage environment, a member for manufacturing a semiconductor, and a method for manufacturing the aluminum nitride sintered compact.

SOLUTION: The aluminum nitride sintered compact consists mainly of aluminum nitride, contains 0.4 to 1.5 wt.% magnesium and 2.0 to 5.0 wt.% yttrium, wherein its average grain size is ≤1.0 μm.

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