| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a MOS transistor and is preferably applied as an oscillation circuit, wherein a circuit operation is at a high speed and good controllability is provided. SOLUTION: In the semiconductor device 10, each of a plurality of transistors 14-1 to 14-3 has a drain 13b, a pair of sources 13a arranged across the drain 13b, and a pair of gate electrodes 12 arranged between the drain 13b and the pair of sources 13a, and the transistors are arranged in a column shape. In the adjacent two transistors 14, sources 13a of the pair of sources 13a are adjacent to each other, a dummy gate electrode 12a is arranged between the sources 13a adjacent to each other, and the dummy gate electrode 12a is kept at the same potential as those of the sources 13a adjacent to each other. COPYRIGHT: (C)2007,JPO&INPIT |
