发明名称 Regulation circuit for field effect transistor (FET) has first and second switching configurations for respectively maintaining and regulating source voltage of FET
摘要 <p>A connecting channel (K) is provided between the source (S6) and drain (D6) of a FET (T6) whose channel resistance is adjustable. A first switching configuration maintains the source voltage at a constant voltage level if the input channel voltage, Kin, is greater than or equal to zero and the output channel voltage, Kout, is less than or equal to 1.5 volts. A second switching configuration regulates the source voltage due to a variation in the input and output channel voltages.</p>
申请公布号 DE102005016748(A1) 申请公布日期 2006.10.12
申请号 DE20051016748 申请日期 2005.04.11
申请人 MICRONAS GMBH 发明人 BAUER, ACHIM;NIEDERFRINIGER, THOMAS
分类号 H03K17/06;H03K17/082;H03K17/687 主分类号 H03K17/06
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