发明名称 |
Regulation circuit for field effect transistor (FET) has first and second switching configurations for respectively maintaining and regulating source voltage of FET |
摘要 |
<p>A connecting channel (K) is provided between the source (S6) and drain (D6) of a FET (T6) whose channel resistance is adjustable. A first switching configuration maintains the source voltage at a constant voltage level if the input channel voltage, Kin, is greater than or equal to zero and the output channel voltage, Kout, is less than or equal to 1.5 volts. A second switching configuration regulates the source voltage due to a variation in the input and output channel voltages.</p> |
申请公布号 |
DE102005016748(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
DE20051016748 |
申请日期 |
2005.04.11 |
申请人 |
MICRONAS GMBH |
发明人 |
BAUER, ACHIM;NIEDERFRINIGER, THOMAS |
分类号 |
H03K17/06;H03K17/082;H03K17/687 |
主分类号 |
H03K17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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