| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory and its manufacturing method. SOLUTION: The memory apparatus further includes a plurality of magnetic storage cells. Each of the magnetic storage cells includes an electrical insulating film extending between a magnetic storage element and a magnetic flux focusing film on the magnetic storage element, and a bit line and the magnetic flux focusing film. The electrical insulating film can be contacted by the upper surface of the magnetic flux focusing film and the lower surface of the bit line. The magnetic storage cell is extended between the magnetic flux focusing film and the magnetic storage element, and further includes an electrical, conductive film composed of a non-ferromagnetic material. COPYRIGHT: (C)2007,JPO&INPIT
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