| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device whose ohmic resistance is less between an electrode and a channel and has a good high frequency characteristic. SOLUTION: Recessed channels 16a, 17a are located at a position where a drain electrode 16 and a source electrode 17 are formed on an undoped gallium arsenide (GaAs) layer 15a as a cap layer, the drain electrode 16 and the source 17 are formed in the channels 16a and 17a respectively, and the distance is shortened between each electrode and an n-type gallium arsenide (GaAs) layer 13 as a channel layer. The exposure of surroundings of the channels 16a, 17a is prevented by forming the drain electrode 16 and the source electrode 17 in a shape to overhang the surface of the undoped gallium arsenide (GaAs) layer 15a as a cap layer, and the effect can be reduced that the variation of surface level at this position gives to the n-type gallium arsenide (GaAs) layer 13. COPYRIGHT: (C)2007,JPO&INPIT
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