| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching circuit which is superior in higher harmonic characteristics and insertion loss, a semiconductor device and to provide its manufacturing method. SOLUTION: This switching circuit is provided with a first FET (81) connected to either an input terminal (70) or an output terminal (72), whose conduction/non-conduction is controlled by a gate electrode connected to a control terminal (74), and second FETs (82, 83, 84) connected between either the input terminal (70) or the output terminal (72) and a first FET (81), whose conduction/non-conduction is controlled by the gate electrode connected to the control terminal (74). The gate reverse breakdown voltage of the first FET is set so as to be larger than that of the second FET, or the off-capacity of the first FET is set so as to be smaller than that of the second FET. A semiconductor device and its manufacturing method are provided as well. COPYRIGHT: (C)2007,JPO&INPIT
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