| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element made by using an AlGaIP series semiconductor material which element shows fine light-emitting efficiency, and excellent performance of lower operation current, an expanded operation temperature range, higher output, etc. SOLUTION: The semiconductor laser element has a second conductive (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P electron confining layer 13 between an active layer 4 and a first second-conductive AlGaInP clad layer 5. When the composition ratio x of the electron confining layer 13 is xc under the condition that a hetero barrierΔEc becomes maximal in a conduction band on a hetero junction formed between the active layer 4 and the second-conductive AlGaInP clad layer 5, the electron confining layer 13 is designed to have a composition changing part where the composition x changes continuously between x1 and x2. The ratio x1 is a value smaller than xc in the direction of thickness, and the ratio x2 is a value larger than xc in the same direction. A composition ratio y of the electron confining layer 13 is determined to be 0.516 or larger. COPYRIGHT: (C)2007,JPO&INPIT
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