Flash memory cells with reduced distances between cell elements

摘要

An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope downward at an angle determined by the thickness of the ARC. The etching process could include CF₄ chemistry. The inner edges of the sloped ARC areas reduce the original photo-defined space since the underlying layers are now defined by the sloped edges.