发明名称 |
Non-Volatile Memory Device |
摘要 |
A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends in a first direction of the memory array and functions as a gate electrode of a selection transistor included in each memory cell. A second interconnect line extends in the first direction of the memory array. A third interconnect line extends in a second direction. The magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines
|
申请公布号 |
US2006227600(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20060381578 |
申请日期 |
2006.05.04 |
申请人 |
|
发明人 |
MIYATAKE HISATADA;NODA KOHKI;SUNAGA TOSHIO;UMEZAKI HIROSHI;ASANO HIDEO;KITAMURA KOJI |
分类号 |
G11C11/00;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|