NON-VOLATILE MEMORY ELECTRONIC DEVICE WITH NAND STRUCTURE BEING MONOLITHICALLY INTEGRATED ON SEMICONDUCTOR

摘要

A non-volatile memory electronic device is integrated on a semiconductor with an architecture including at least one memory matrix organized in rows or word lines and columns or bit lines of memory cells. The matrix is divided into at least a first and a second memory portions having a different access speed. The first and second memory portions may share the structures of the bit lines which correspond to one another and one by one and are electrically interrupted by controlled switches placed between the first and the second portions.