| 摘要 |
An antifuse element ( 102 ) having end corners ( 120, 122 ) of a gate electrode ( 104 ) positioned directly above an active area ( 106 ) or bottom electrode. The minimum programming voltage between the gate electrode ( 104 ) and the active area ( 106 ) creates a current path through an insulating layer ( 110 ) positioned therebetween. The high electric field created at the end corners ( 120, 122 ) of the gate electrode ( 104 ) results in a breakdown and rupture of the insulating layer ( 110 ) at points directly beneath the end corners ( 120, 122 ). This localization of the insulating layer ( 110 ) at the corners ( 120,122 ) provides for lower post program resistance and variation, and faster programming at a lower programming power. The antifuse elements ( 102 ) when integrated into an array ( 300, 320, 400, 550 ) provide for increased packing density. The array is fabricated to include multiple active areas ( 304 ) for individual antifuse element ( 302 ) programming or a common active area ( 324,405,426,506 ) for multi-element programming.
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