An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
申请公布号
WO2006078666(A3)
申请公布日期
2006.10.12
申请号
WO2006US01640
申请日期
2006.01.17
申请人
ASM AMERICA, INC.;VERGHESE, MOHITH;SHERO, ERIC;BABIC, DARKO;TERHORST, HERBERT;PEUSSA, MARKO;YAN, MIN
发明人
VERGHESE, MOHITH;SHERO, ERIC;BABIC, DARKO;TERHORST, HERBERT;PEUSSA, MARKO;YAN, MIN