METHOD AND SYSTEM FOR FORMING A HIGH-K DIELECTRIC LAYER
摘要
<p>A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.</p>
申请公布号
WO2006107417(A2)
申请公布日期
2006.10.12
申请号
WO2006US05432
申请日期
2006.02.16
申请人
TOKYO ELECTRON LIMITED;WAJDA, CORY;IGETA, MASANOBU;LEUSINK, GERT