发明名称 PLASMA PROCESSING METHOD AND SYSTEM
摘要 <p>Plasma processing method and system which can monitor an ion current incident to the surface of a sample accurately. A vacuum container (1) is evacuated through an outlet (11) by means of a turbo-molecular pump (3) while introducing predetermined gas from a gas supply unit (2), and a predetermined pressure level is sustained in the vacuum container (1) by means of a pressure regulating valve (4). Induction coupling plasma is generated in the vacuum container (1) by supplying a high frequency power from a high frequency power supply (5) for plasma source to a coil (8) provided in the vicinity of a dielectric window (7). A high frequency power supply (10) for sample electrode for supplying a high frequency power to a sample electrode (6) is provided, and a matching circuit (13) for sample electrode and a high frequency sensor (14) are provided between the high frequency power supply (10) for sample electrode and the sample electrode (6). An ion current incident to the surface of a sample can thereby be monitored accurately using the high frequency sensor (14) and a arithmetic unit (15).</p>
申请公布号 WO2006107044(A1) 申请公布日期 2006.10.12
申请号 WO2006JP307126 申请日期 2006.04.04
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;OKUMURA, TOMOHIRO;SASAKI, YUICHIRO;OKASHITA, KATSUMI;ITO, HIROYUKI;MIZUNO, BUNJI;JIN, CHENG-GUO;NAKAYAMA, ICHIRO 发明人 OKUMURA, TOMOHIRO;SASAKI, YUICHIRO;OKASHITA, KATSUMI;ITO, HIROYUKI;MIZUNO, BUNJI;JIN, CHENG-GUO;NAKAYAMA, ICHIRO
分类号 H05H1/00;H01L21/205;H01L21/265;H01L21/302;H05H1/46 主分类号 H05H1/00
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