METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a nonvolatile memory device is provided to improve isolation characteristics by employing an isolation layer pattern being protruded from a substrate. A mask pattern structure, where a pad oxide layer pattern and a hard mask pattern are stacked, is formed on a substrate(100). The substrate is etched by using the mask pattern structure as an etch mask to form an isolation trench. A spare isolation layer pattern is formed in the isolation trench. An upper surface of the spare isolation layer pattern is lower than that of the mask pattern structure. A capping layer pattern(112a) is formed to cover the spare isolation layer pattern. Partial sidewalls of the mask pattern structure and the spare isolation layer pattern adjacent to the mask pattern structure are removed to generate an opening unit(114) exposing the substrate surface and convert the spare isolation layer pattern into an isolation layer pattern(111a). A tunnel oxide layer is formed on the substrate surface of a lower surface of the opening unit. A floating gate electrode layer is formed in the opening unit.