| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of stably manufacturing a highly integrated semiconductor device. <P>SOLUTION: In order to form a bump electrode for a plurality of pads on which a wire is stitch-bonded, firstly a bump electrode is formed on one of a plurality of pads in a first process. Then in a second process, just after the first process, a wire is stitch-bonded on the bump electrode. In a third process, the first and second processes are repeated likewise for other pads among the plurality of pads. <P>COPYRIGHT: (C)2007,JPO&INPIT |
