| 摘要 |
PROBLEM TO BE SOLVED: To provide a refractive-index waveguide semiconductor light emitting element group III nitride based material having an active layer containing In with a reduced operating voltage, whose etching depth can be well controlled and which is easy to be manufactured. SOLUTION: At least a first conductive-type cladding layer, an active layer, a second conductive-type etching stop layer, a first conductive-type or half-insulating current constriction layer, a second conductive-type cladding layer and a second conductive-type contact layer are laminated on a substrate. The active layer is composed of a group III nitride material containing In. The second conductive-type etching stop layer is composed of a group III nitride material containing In with a larger forbidden bandwidth than the active layer. The first conductive-type or half-insulating current constriction layer is composed of a group III nitride material containing As or P but no In. Etching is performed up to the surface of the second conductive-type etching stop layer to form a stripe region. COPYRIGHT: (C)2007,JPO&INPIT
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