| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, i.e. an MIS transistor having a gate insulating film composed of a material having a high dielectric constant, in which controllability of threshold is improved, and to provide its fabrication process. SOLUTION: The semiconductor device comprises a semiconductor layer 10, a gate insulating film 22 having a high dielectric constant provided above the semiconductor layer 10, a gate electrode 24 provided above the gate insulating film 22 having a high dielectric constant, and an impurity region 28 becoming a source region or a drain region provided in the semiconductor layer 10 wherein the gate electrode 24 includes a first gate electrode layer 24 composed of a material which is not bonded easily to at least one kind of elements composing the gate insulating film having a high dielectric constant. COPYRIGHT: (C)2007,JPO&INPIT
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