| 摘要 |
PROBLEM TO BE SOLVED: To propose a method for manufacturing a semiconductor ingot which is small in variation of specific resistance, uniform in quality and excellent in characteristics. SOLUTION: In the method for manufacturing the semiconductor ingot by solidifying a semiconductor melt 9 containing a first dopant material regulating a first conduction type in the prescribed direction within a casting mold, the liquid surface of the semiconductor melt 9 in the solidification process is measured and the semiconductor raw material having the first dopant concentration lower than that of the semiconductor melt is supplied into the semiconductor melt according to the measured value. COPYRIGHT: (C)2007,JPO&INPIT
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