Semiconductor device and semiconductor device manufacturing method

摘要

A semiconductor technique is provided which can achieve both of lowered resistance in a logic formation region and reduced leakage current of the capacitor of a memory device. Source/drain regions ( 4 ) are formed in the upper surface of a semiconductor substrate ( 1 ) in a memory formation region and cobalt silicide films ( 9 ) are formed in the upper surfaces of the source/drain regions ( 4 ). Source/drain regions ( 54 ) are formed in the upper surface of the semiconductor substrate ( 1 ) in a logic formation region and cobalt silicide films ( 59 ) are formed in the upper surfaces of the source/drain regions ( 54 ). The cobalt silicide films ( 59 ) in the logic formation region are thicker than the cobalt silicide films ( 9 ) in the memory formation region.