发明名称 PLASMA FORMATION DEVICE AND PLASMA TREATMENT DEVICE AS WELL AS PLASMA FORMATION METHOD AND PLASMA TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment device and a treatment method for preventing damages by plasma on conductive/semi-conductive treated surface or a conductive/semi-conductive treated thin film by efficiently applying a plasma treatment on the surface or the thin film in an atmospheric pressure. <P>SOLUTION: The plasma formation device 2 is composed of a plasma generation part 4 with a gliding arc electrode pair 18 with a distance between the electrodes becoming larger toward a working gas moving direction and an emission port 20 emitting plasma to the plasma generation part 4, with a tip of the electrode pair 18 located inside the emission port 20. The working gas 14 above or near an atmospheric pressure is to be supplied between the electrodes by a working gas supply means and arc 4a generated between the electrodes at impression of voltage produces gliding arc moving toward a wider opening of the electrodes to form plasma. The plasma formation device 2 radiates this plasma from the emission port 20. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006277953(A) 申请公布日期 2006.10.12
申请号 JP20050090160 申请日期 2005.03.25
申请人 TOYOHASHI UNIV OF TECHNOLOGY;SUMITOMO OSAKA CEMENT CO LTD;KURITA SEISAKUSHO:KK 发明人 TAKIGAWA HIROSHI;SHIKI HAJIME;MOTOKI JUNPEI;OTSUKA TAKASHI;KINOSHITA NOBORU;NISHIMURA YOSHIMI
分类号 H05H1/34;B01J19/08;H01L21/304 主分类号 H05H1/34
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