发明名称 |
PLASMA FORMATION DEVICE AND PLASMA TREATMENT DEVICE AS WELL AS PLASMA FORMATION METHOD AND PLASMA TREATMENT METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device and a treatment method for preventing damages by plasma on conductive/semi-conductive treated surface or a conductive/semi-conductive treated thin film by efficiently applying a plasma treatment on the surface or the thin film in an atmospheric pressure. <P>SOLUTION: The plasma formation device 2 is composed of a plasma generation part 4 with a gliding arc electrode pair 18 with a distance between the electrodes becoming larger toward a working gas moving direction and an emission port 20 emitting plasma to the plasma generation part 4, with a tip of the electrode pair 18 located inside the emission port 20. The working gas 14 above or near an atmospheric pressure is to be supplied between the electrodes by a working gas supply means and arc 4a generated between the electrodes at impression of voltage produces gliding arc moving toward a wider opening of the electrodes to form plasma. The plasma formation device 2 radiates this plasma from the emission port 20. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006277953(A) |
申请公布日期 |
2006.10.12 |
申请号 |
JP20050090160 |
申请日期 |
2005.03.25 |
申请人 |
TOYOHASHI UNIV OF TECHNOLOGY;SUMITOMO OSAKA CEMENT CO LTD;KURITA SEISAKUSHO:KK |
发明人 |
TAKIGAWA HIROSHI;SHIKI HAJIME;MOTOKI JUNPEI;OTSUKA TAKASHI;KINOSHITA NOBORU;NISHIMURA YOSHIMI |
分类号 |
H05H1/34;B01J19/08;H01L21/304 |
主分类号 |
H05H1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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