发明名称 |
Method for making a semiconductor device with strain enhancement |
摘要 |
A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the control electrode are implanted to form first and second doped current electrode regions, a portion of each of the first and second doped current electrode regions being driven to underlie both the insulating layer and the control electrode in a channel region of the semiconductor device. The first and second doped current electrode regions are removed from the semiconductor substrate except for underneath the control electrode and the insulating layer to respectively form first and second trenches. An insitu doped material containing a different lattice constant relative to the semiconductor substrate is formed within the first and second trenches to function as first and second current electrodes of the semiconductor device.
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申请公布号 |
US2006228863(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050092291 |
申请日期 |
2005.03.29 |
申请人 |
ZHANG DA;NGUYEN BICH-YEN;THEAN VOON-YEW;SHIHO YASUHITO;DHANDAPANI VEER |
发明人 |
ZHANG DA;NGUYEN BICH-YEN;THEAN VOON-YEW;SHIHO YASUHITO;DHANDAPANI VEER |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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