发明名称 Bi-directional transistor and method therefor
摘要 In one embodiment, a transistor is formed to conduct current in both directions through the transistor.
申请公布号 US2006226439(A1) 申请公布日期 2006.10.12
申请号 US20050093381 申请日期 2005.03.31
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. 发明人 ROBB STEPHEN P.;ROBB FRANCINE Y.;HIGHTOWER ROBERT F.
分类号 H01L29/74;H01L21/8238;H01L27/082;H01L27/102;H01L29/70;H01L31/111 主分类号 H01L29/74
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