发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of peeling only chemical amplification type negative resist, without impairing the anti-refraction effects of an a-C:H film. <P>SOLUTION: A chemical amplified negative resist pattern formed on a surface of an amorphous carbon film is peeled by using an acid solution which will not substantially etch amorphous carbon. Alternatively, the chemical amplified negative resist pattern formed on the surface of the amorphous carbon film is peeled off, by using an alkali solution which will not substantially etch amorphous carbon. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006276869(A) 申请公布日期 2006.10.12
申请号 JP20060112057 申请日期 2006.04.14
申请人 FUJITSU LTD 发明人 KAWAMURA EIICHI;YAO TERUYOSHI;NAORI NOBUHISA;HASHIMOTO KOICHI;KOBAYASHI MASAHARU;OSHIMA MASASHI
分类号 G03F7/42;G03F7/11;H01L21/027 主分类号 G03F7/42
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