| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device having a magnetoresistive effect element using a spin injection magnetization reversing mechanism, and a manufacturing method for the device which device and method prevent a malfunction due to a magnetic field leaking from wiring such as word lines or bit lines, that are formed near the magnetroresistive effect element. SOLUTION: The magnetic memory device includes the magnetroresistive effect element which has a ferromagnetic layer 50, nonmagnetic layer 52 formed on the ferromagnetic layer 50, and a ferromagnetic layer 54 formed on the nonmagnetic layer 52, and which reverses the direction of magnetization of the ferromagnetic layer 54 by injection of spin; and a first wiring 78 which is formed near the magnetoresistive effect element and is made by coating a nonmagnetic conductor material 74 with a shield layer consisting of magnetic conductor materials 72, 76. COPYRIGHT: (C)2007,JPO&INPIT |
