发明名称 Profile control using selective heating
摘要 A semiconductor processing system includes a thickness monitoring system, a position monitoring system, and a processor. The processor is configured to receive information indicative of a local thickness of a layer on a substrate during processing, and information indicative of a position of the substrate during processing. The system may include an energy source to receive parameters from the processor, and to selectively output energy based on the parameters. The information indicative of a local thickness of a layer on a substrate may be indicative of a radial thickness distribution.
申请公布号 US2006226123(A1) 申请公布日期 2006.10.12
申请号 US20050101106 申请日期 2005.04.07
申请人 APPLIED MATERIALS, INC. 发明人 BIRANG MANOOCHER
分类号 C03C15/00;B44C1/22;C23F1/00;H01L21/461 主分类号 C03C15/00
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