| 摘要 |
A method of manufacturing a semiconductor device includes forming a gate insulation film on a semiconductor substrate; forming a gate electrode on the gate insulation film; depositing a metal film on the gate electrode; siliciding an upper part of the gate electrode by carrying out a first heat treating; removing the metal film not silicided in the first heat treating; and siliciding the gate electrode to a lower part of the gate electrode by carrying out a second heat treating.
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